4H-SiC Step Trench Gate Power Metal-Oxide-Semiconductor Field-Effect Transistor

作者：Wang, Ying^*; Tian, Kai; Hao, Yue; Yu, Cheng-Hao; Liu, Yan-Juan

来源：IEEE Electron Device Letters, 2016, 37(5): 633-635.

DOI：10.1109/LED.2016.2542183

• Trench-gate UMOSFET
• on-state specific resistance (Ron-sp)
• breakdown voltage (BV)
• specific gate-drain charge (Qgd-sp)

In this letter, an improved 4H-SiC step trenchgate power metal-oxide-semiconductor field-effect transistor (MOSFET) with a p-n junction in the trench is proposed. The step trench significantly reduces the ON-resistance of the device. And the p-n junction in the trench reduces the gate charge. Compared with the conventional p(+) shielding trench MOSFET structure, simulation results show that the specific ON-resistance and gate charge of the proposed device are improved by 26.4% and 34.7%, respectively. A 43.4% improvement in the figure of merit (including the breakdown voltage and ON-resistance) is also observed.

• 出版日期2016-5
• 单位杭州电子科技大学; 西安电子科技大学; 西安交通大学