X-ray characterization of GGG homoepitaxial layers with introduced divalent Ni ions

作者：Mazur K^*; Sarnecki J; Wierzchowski W; Wieteska K; Turos A

来源：Radiation Physics and Chemistry, 2011, 80(10): 1084-1087.

DOI：10.1016/j.radphyschem.2011.03.008

• GGG films
• LPE
• HRXRD

The study of structural perfection of GGG homoepitaxial layers with incorporated divalent Ni ions Ni,Ge:GGG has been performed by means of HR X-ray diffraction and optical spectroscopy. Epitaxial layers were grown by the LPE technique from supercooled high temperature solution with different concentration of NiO and GeO(2) on both sides of the polished <1 1 1> oriented GGG substrates. Incorporation of optically inert Ge(4+) ions made it possible to incorporate Ni(2+) ions in the garnet lattice. High structural perfection and the relevant absorption spectra are prerequisite for the use of Ni,Ge:GGG epitaxial layers as infrared saturable absorbers.

• 出版日期2011-10
• 单位中国原子能科学研究院