Nitrogen incorporation in SnO2 thin films grown by chemical vapor deposition

作者：Jiang Jie^*; Lu Yinmei; Kramm Benedikt; Michel Fabian; Reindl Christian T; Kracht Max E; Klar Peter J; Meyer Bruno K; Eickhoff Martin

来源：Physica Status Solidi (B) Basic Research, 2016, 253(6): 1087-1092.

DOI：10.1002/pssb.201552747

• chemical composition
• chemical vapor deposition
• nitrogen
• SnO2
• structure
• thin films

The influence of nitrogen incorporation in high concentrations on the structural properties and morphology of SnO2-xNx thin films grown by chemical vapor deposition is studied. A decrease in crystallite size and a lattice expansion in SnO2-xNx films with increasing x are found by X-ray diffraction analysis and Raman spectroscopy. Substitutional nitrogen with a binding energy of 397.15 eV was detected by X-ray photoelectron spectroscopy, attributed to the N3- ion in the Sn-N bond. The increase of the N atomic concentration x in SnO2-xNx films from 0 to 7.9 at.% without phase separation with increasing NH3 flow rate during the deposition is accompanied by a decrease of O atomic concentration.

• 出版日期2016-6