High hole concentration Mg doped a-plane GaN with MgN by metal-organic chemical vapor deposition

作者：Song Keun Man; Kim Jong Min; Choi Je Hyuk; Kang Dae Hun; Kim Kahee; Hwang Sung Min; Kang Bong Kyun; Yoon Dae Ho^*

来源：Materials Letters, 2015, 142: 335-338.

DOI：10.1016/j.matlet.2014.12.072

• GaN
• Nonpolar
• MgN
• MOCVD
• AFM

Mg doped a-plane GaN layers with MgN interlayers were grown on r-plane sapphire substrates by metalorganic chemical vapor deposition. Nonpolar Mg doped a-plane GaN without MgN exhibited a rough surface morphology, with both various sized, and large number of faceted pits. Meanwhile, nonpolar p-type GaN layers using MgN exhibited improved surface morphology, with typical stripe features along the [0 0 0 1] direction, and reduced faceted triangular pits on the surface, leading to increased hole concentration and crystal quality. The effect of insertion of MgN interlayers and their characteristics in Mg doped a-plane GaN were estimated by Hall-effect measurement, atomic force microscopy (AFM), cathode luminescence (CL), X-ray diffraction (XRD), and transmission electron microscope (TEM) measurement.

• 出版日期2015-3-1