Anisotropic n-Type Bi2Te3-In2Te3 Thermoelectric Material Produced by Seeding Zone Melting and Solid State Transformation

作者：Liu, Dongmei^*; Stoetzel, Julia; Seyring, Martin; Druee, Martin; Li, Xinzhong; Schmechel, Roland; Rettenmayr, Markus

来源：Crystal Growth & Design, 2016, 16(2): 617-624.

DOI：10.1021/acs.cgd.5b01015

• QUANTUM-WELL STRUCTURES
• NANOSTRUCTURED THERMOELECTRICS
• POINT-DEFECTS
• PERFORMANCE
• FIGURE
• CRYSTALS
• EFFICIENCY
• BI2TE3
• SB2TE3
• IN2TE3

Seeding zone melting is applied to produce bulk Bi1.625In0.375Te3 with 7.5 atom % In in solid solution. The concentration distribution is markedly homogeneous and exhibits pronounced anisotropic electrical and thermal conductivity. Subsequent precipitation from the solid solution leads to the formation of a highly anisotropic composite thermoelectric material consisting of aligned microscaled Bi2Te3 and extended micro- to nanoscaled In2Te3 plates. By the precipitation, an increase of zT by a factor of 6 compared with the parent supersaturated solid solution crystal is achieved. This is attributed to the combination of a decrease of In concentration from 7.5 to 3 atom % in the Bi2Te3 layer and an increasing interface density due to the precipitation of In2Te3. The Bi2Te3/In2Te3 interface is determined as coherent, and the crystallographic orientation between the two phases is determined as <(2) over bar 11 >(In2Te3)//< 1 (1) over bar 00 >(Bi2Te3), {111}(In2Te3)//{0001}(Bi2Te3).

• 出版日期2016-2
• 单位哈尔滨工业大学