A wide-band UV photodiode based on n-ZnO/p-Si heterojunctions

作者：Al Hardan N H^*; Jalar Azman; Hamid M A Abdul; Keng Lim Kar; Ahmed N M; Shamsudin R

来源：Sensors and Actuators A: Physical , 2014, 207: 61-66.

DOI：10.1016/j.sna.2013.12.024

• ZnO nanostructures
• Heterojunction
• UV photodiode
• Hydrothermal

We report on the fabrication of zinc oxide (ZnO) nanorods on p-type silicon (p-Si) photodiodes. The nanorods are prepared by low-temperature hydrothermal processing. The fabricated photodiodes exhibit an excellent rectifying ratio of 370 at 10 V. The responsivity to ultraviolet (UV) photons is stable at 0.29 A/W up to 300 nm, with a peak value of 0.38 A/W at 360 nm. Furthermore, the prepared photodiodes demonstrate visible blind behavior, indicating that ZnO nanorods grown on p-Si substrates can be used as UV photodiodes with visible blind responses.

• 出版日期2014-3-1