Unique Current-Direction-Dependent ON-OFF Switching in BiSbTeSe2 Topological Insulator-Based Spin Valve Transistors

作者：Zhang, Minhao; Wang, Xuefeng^*; Zhang, Shuai; Gao, Yuan; Yu, Zhihao; Zhang, Xiaoqian; Gao, Ming; Song, Fengqi; Du, Jun; Wang, Xinran; He, Liang; Xu, Yongbing^*; Zhang, Rong^*

来源：IEEE Electron Device Letters, 2016, 37(9): 1231-1233.

DOI：10.1109/LED.2016.2587724

• Spin valve transistors
• topological insulators
• ON-OFF state
• spin-logic circuits
• spin generators

In this letter, spin valve transistors are fabricated based on BiSbTeSe2 topological insulator (TI) with enhanced surface mobility (similar to 4039 cm(2)V(-1)s(-1)). The output in our spin valve transistors exhibits a dominant steplike behavior when sweeping the magnetic field to change the magnetization orientation of the Ni21Fe79 electrode. Most importantly, the ON (low resistance)-OFF (high resistance) state can be even switched when reversing the direction of the dc current. The TI-based spin valve transistors enable the current-direction-dependent switching of ON-OFF state, allowing for the applicability in magnetic sensors and spin-logic circuits, and show the potential use of TIs as innovative current-driven spin generators.

• 出版日期2016-9
• 单位南京大学