Ab initio electronic band structure study of III-VI layered semiconductors

作者:Olguin Daniel*; Rubio Ponce Alberto; Cantarero Andres
来源:European Physical Journal B, 2013, 86(8): 350.
DOI:10.1140/epjb/e2013-40141-1

摘要

We present a total energy study of the electronic properties of the rhombohedral gamma-InSe, hexagonal epsilon-GaSe, and monoclinic GaTe layered compounds. The calculations have been done using the full potential linear augmented plane wave method, including spin-orbit interaction. The calculated valence bands of the three compounds compare well with angle resolved photoemission measurements and a discussion of the small discrepancies found has been given. The present calculations are also compared with recent and previous band structure calculations available in the literature for the three compounds. Finally, in order to improve the calculated band gap value we have used the recently proposed modified Becke-Johnson correction for the exchange-correlation potential.

  • 出版日期2013-8