A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

作者:Saranti Konstantina; Alotaibi Sultan; Paul Shashi*
来源:Scientific Reports, 2016, 6(1): 27506.
DOI:10.1038/srep27506

摘要

The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 degrees C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

  • 出版日期2016-6-9