Analysis of electronic parameters and interface states of boron dispersed triethanolamine/p-Si structure by AFM, I-V, C-V-f and G/omega-V-f techniques

作者：Yakuphanoglu Fahrettin^*; Okur Salih

来源：Microelectronic Engineering, 2010, 87(1): 30-34.

DOI：10.1016/j.mee.2009.05.012

• Metal/semiconductor contacts
• Boron
• Interfacial state density

The electronic parameters and interface state properties of boron dispersed triethanolamine/p-Si structure have been investigated by atomic force microscopy, I-V, C-V-f and G/omega-V-f techniques. The surface topography and phase image of the TEA-B film deposited onto p-Si substrate were analyzed by atomic force microscopy. The atomic force microscopy results show a homogenous distribution of boron particles in triethanolamine film. The electronic parameters (barrier height, ideality factor and average series resistance) obtained from I-V characteristics of the diode are 0.81 eV, 2.07 and 5.04 k Omega, respectively. The interface state density of the diode was found to be 2.54 x 10(10) eV(-) cm(-2) under V(g) = 0. The obtained D(it) values obtained from C-V and G/omega measurements are in agreement with each other. The profile of series resistance dependent on voltage and frequency confirms the presence of interface states in boron dispersed triethanolamine/p-Si structure. It is evaluated that the boron dispersed triethanolamine controls the electronic parameters and interface properties of conventional Al/p-Si diode.

• 出版日期2010-1