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摘要
This study reports the variation in the switch-on voltages of resistive switching devices using an electron-donating conjugated polymer, poly(3-hexylthiophene), P3HT, and hexaazatriphenylene-derivative acceptors. Memory devices fabricated using the spin-coated blends demonstrated electrical bistability with a conductivity modulation of similar to 2 orders in magnitude and with negligible data loss after a stress test of 500 consecutive readouts conducted at 0.2 V. The switch-on voltage of the resistive switching device can be altered by using molecular acceptors with different LUMO levels. The charge transfer between the donor and acceptor was shown by quenching the fluorescence emission from P3HT after adding the acceptors. UV-vis absorption and Raman spectroscopic characterization revealed electrostatic doping of P3HT after switching the device from its OFF to ON state. The charge injection mechanisms of the two different conductive states were also analyzed and were found to be due to thermionic emission and Poole-Frenkel tunneling when the device is in the low and high conductive states, respectively.
- 出版日期2013-1-10
- 单位南阳理工学院
