Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials

作者：Stieger Christian; Szabo Aron; Bunjaku Teute; Luisier Mathieu^*

来源：Journal of Applied Physics, 2017, 122(4): 045708.

DOI：10.1063/1.4990384

Through advanced quantum mechanical simulations combining electron transport and phonon transport from first-principles, self-heating effects are investigated in n-type transistors with single-layer MoS2, WS2, and black phosphorus as channel materials. The selected 2-D crystals all exhibit different phonon-limited mobility values, as well as electron and phonon properties, which have a direct influence on the increase in their lattice temperature and on the power dissipated inside their channel as a function of the applied gate voltage and electrical current magnitude. This computational study reveals (i) that self-heating plays a much more important role in 2-D materials than in Si nanowires, (ii) that it could severely limit the performance of 2-D devices at high current densities, and (iii) that black phosphorus appears less sensitive to this phenomenon than transition metal dichalcogenides. Published by AIP Publishing.

• 出版日期2017-7-28