The analysis of Au/TiO2/n-Si Schottky barrier diode at high temperatures using I-V characteristics

作者：Kinaci B^*; Asar T; Ozen Y; Ozcelik S

来源：Optoelectronics and Advanced Materials-Rapid Communications, 2011, 5(3-4): 434-437.

• Schottky barrier diode
• TiO2
• Temperature dependence
• DC magnetron sputtering

In this study, the current-voltage (I-V) characteristics of Au/TiO2/n-Si Schottky barrier diodes (SBDs) were examined at high temperatures. TiO2 thin films were deposited on polycrystalline n-type Silicon (Si) substrate using DC magnetron sputtering system. In order to improve the crystal quality, thermal anneling process were done at 700 degrees C. The electrical parameters such as barrier height (Phi(b)), ideality factor (n) and series resistance (R-s) of Au/TiO2/n-Si SBDs have been investigated by using forward and reverse bias I-V measurements in the temperature range of 340-400 K by steps of 20 K. Also, the values of R-s and Phi(b) were determined by using Cheung's and Norde methods. It was seen that there was a good agreement between the values of R-s and Phi(b) obtained from the forward bias In(I-V) curves by applying Cheung's and Norde methods.

• 出版日期2011-3