科研之友
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摘要
We experimentally show that the spin relaxation in degenerate n-type germanium (n(+)-Ge) depends strongly on the concentration of the donor impurity (N-d) at low temperatures. From measuring nonlocal spin signals for various lateral spin-valve devices at 8 and 77 K, the spin diffusion length (lambda(Ge)) of n(+)-Ge can be estimated as a function of carrier concentration (n), i.e., N-d approximate to n (similar to 10(18) cm(-3)). We clearly find a large change in lambda(Ge) from 1.43 to 0.56 mu m within a relatively narrow range of n at 8 K. The experimental findings are interpreted quantitatively in terms of a recent theory based on donor-driven spin scattering in multivalley conduction bands in Ge.
- 出版日期2017-4-14
