The Comparison of the High-k Sm2O3 and Sm2TiO5 Dielectrics Deposited on the Polycrystalline Silicon

作者：Kao Chyuan Haur^*; Chen Hsiang; Lin Shih Po

来源：Electrochemical and Solid-State Letters, 2011, 14(2): G9-G12.

DOI：10.1149/1.3519812

In this study, the Ti-doped high-k Sm2TiO5 polyoxide dielectric deposited on poly-Silicon treated with the postrapid thermal annealing (RTA) showed a higher effective dielectric constant, lower leakage current, higher breakdown electric field, smaller gate voltage shift, lower electron trapping rate, and larger Q(bd) than those of the high-k Sm2O3 polyoxide dielectric. The high-k Sm2TiO5 treated with post-RTA at 800 degrees C had the best dielectric performance among all the conditions. Incorporating some Ti content into the Sm2O3 dielectric made noticeable improvements in the electrical performance and material quality. The Sm2TiO5 dielectric is a very promising high-k dielectric for the future nonvolatile memory applications.

• 出版日期2011
• 单位长春大学