Direct bonding of Cu to oxidized silicon nitride by wetting of molten Cu and Cu(O)

作者：Tanaka Shun Ichiro^*

来源：Journal of Materials Science, 2010, 45(8): 2181-2187.

DOI：10.1007/s10853-009-3951-4

When pressureless sintered silicon nitride with the main additives Y(2)O(3) and Al(2)O(3), having a thermal conductivity K = 20 W/m K, was oxidized at 1240-1360 A degrees C in still air, the resulting surface oxide layer easily bonded to a copper plate in the temperature region between 1065 and 1083 A degrees C, and in the oxygen concentration range of 0.008-0.39 wt%, as shown in a Cu-O phase diagram. The oxide on the silicon nitride was characterized as Y(2)O(3)center dot 2SiO(2) and mixed silicate glass with additives and impurities that diffused through the grain boundary. The bonding strength of Cu/Si(3)N(4) depends on the amount or layer thickness of silicate glass and reaches as high as 100 MPa by shear at room temperature. Detailed analysis of the oxidation layer and the peeled-off surfaces of directly bonded Si(3)N(4)/Cu reveal that the main mechanism of bonding is wetting to glassy silicate phase by mixtures of molten Cu and alpha-solid solution Cu(O), which solidify to alpha + Cu(2)O below 1065 A degrees C by a eutectic reaction. The direct reactive wetting of molten Cu, supplied from the grain boundary of a Cu plate, on the glassy phase enables very tight chemical bonding via oxygen atoms.

• 出版日期2010-4