High-Performance MIM Capacitors Using Novel PMNT Thin Films

作者：Chen Wenbin; McCarthy Kevin G; Mathewson Alan; Copuroglu Mehmet; O'Brien Shane; Winfield Richard

来源：IEEE Electron Device Letters, 2010, 31(9): 996-998.

DOI：10.1109/LED.2010.2052585

• Capacitance density
• dielectric constant
• high-kappa
• metal-insulator-metal (MIM) capacitor
• Pb(Mg(0.33)Nb(0.67))(0.65)Ti(0.35)O(3) (PMNT)
• thin-film devices

High-performance metal-insulator-metal (MIM) capacitors using novel Pb(Mg(0.33)Nb(0.67))(0.65)Ti(0.35)O(3) (PMNT) thin films were fabricated and investigated. The dielectric properties of the PMNT capacitors were characterized at both dc and radio frequencies. A significant high-kappa of 1115 (high capacitance density of 26 fF/mu m(2)) for a PMNT MIM capacitor has been achieved. In addition, small leakage current density of 2 x 10(-10) A/cm(2) and low loss tangent of 0.0188 are also obtained. The results indicate that high-kappa PMNT is a promising candidate material for high-performance MIM capacitors.

• 出版日期2010-9