An electrothermally excited dual beams silicon resonant pressure sensor with temperature compensation

作者：Tang Zhangyang^*; Fan Shangchun; Xing Weiwei; Guo Zhanshe; Zhang Zhengyuan

来源：Microsystem Technologies, 2011, 17(9): 1481-1490.

DOI：10.1007/s00542-011-1319-6

An electrothermally excited dual beams silicon resonant pressure sensor with temperature compensation is proposed in this paper. One beam locates upon the diaphragm, whose resonant frequency changes with the measured pressure; the other beam is on the fixed edge, isolated from the pressure effect but sensitive to the temperature variation. Taking the difference of the dual beams'; resonant frequencies, temperature influence can be corrected. Compensation algorithm with consideration of the fabrication errors is deducted theoretically and implemented by a homemade readout system. Experimental results of the test sample indicates that the maxim pressure measurement residual errors without compensation is up to 53.9 kPa in the working temperature range from -40 to 60A degrees C; while with compensation the maxim residual errors decreased to 1.8 kPa from -40 to 60A degrees C, which is only 3.3% of the uncompensated sensor. The experimental results confirm that the new designed sensor has good temperature compensation ability.

• 出版日期2011-9
• 单位北京航空航天大学