科研之友
微信
新浪微博
Facebook
分享链接
摘要
Extreme ultraviolet (EUV) radiation with wavelengths of I I to 14 nm is seen as the most promising candidate for a new lithographic technology. Compared to synchrotron radiation sources and laser produced plasmas, gas discharge produced plasma (GDPP) sources for EUV radiation are expected to offer lower cost of ownership. This paper describes the dependence of EUV emission on gas flow rate. Using xenon a broadband emission in the investigated wavelength range from 10 to 18 nm is observed. Very short current pulses were applied across the xenon-filled Z-pinch capillary (3 mm diameter and 5 mm length) to produce EUV radiation. A EUV radiation from the Z-pinch plasma was characterized, which is based on the temporal behavior of EUV intensity and the pinhole images.
