A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy

作者：Lin Ruei Cheng; Lee Tai Kuang; Wu Der Ho; Lee Ying Chieh^*

来源：Advances in Materials Science and Engineering, 2015, 2015: 847191.

DOI：10.1155/2015/847191

Ni-Cr-Si-Al-Ta resistive thin films were prepared on glass and Al2O3 substrates by DC magnetron cosputtering from targets of Ni-0.35-Cr-0.25-Si-0.2-Al-0.2 casting alloy and Ta metal. Electrical properties and microstructures of Ni-Cr-Si-Al-Ta films under different sputtering powers and annealing temperatures were investigated. The phase evolution, microstructure, and composition of Ni-Cr-Si-Al-Ta films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). When the annealing temperature was set to 300 degrees C, the Ni-Cr-Si-Al-Ta films with an amorphous structure were observed. When the annealing temperature was at 500 degrees C, the Ni-Cr-Si-Al-Ta films crystallized into Al0.9Ni4.22, Cr2Ta, and Ta5Si3 phases. The Ni-Cr-Si-Al-Ta films deposited at 100W and annealed at 300 degrees C which exhibited the higher resistivity 2215 mu Omega cm with -10 ppm/degrees C of temperature coefficient of resistance (TCR).

• 出版日期2015