摘要

Short pulsed (ns) excimer laser was employed as a technique for the deposition of more than 2 gm thick glassy films from phosphorous pentoxide and tungsten lanthanum modified tellurite bulk glasses. High quality glass thin films with measured propagation loss less than 0.15, 0.71 and 2.3 dB.cm(-1) were obtained after optimization of deposition parameters for silica, siloxane and semiconductor substrates. The optical, spectroscopic and microstructural properties of deposited thin films were compared with bulk glass materials for demonstrating the differences in the properties, which must be optimized for device engineering. Channel waveguides were fabricated after using reactive ion etching technique, up to 2 mu m thickness by using CHF3 and Ar gas mixture.

  • 出版日期2010-12