摘要
This work deals with the evaluation of semi-insulating (SI) GaAs radiation detector applicable in the spectrometry of "soft" X-rays (1-20 key) emitted by hot plasmas and evaluation of its performance. SI GaAs detector with thin base and sandwich electrodes configuration was fabricated. The detector chip was mounted onto common support together with the input external JFET and feedback elements and cooled down to 255 K by Peltier cooler. The first JFET stage was connected to the PR307SF hybrid charge-sensitive preamplifier. The shaping amplifier was assembled from the set of CREMAT hybrid circuits allowing variation of the shaping time (0.25-8.0 mu s). The detector performance was evaluated by the measurement of the (241)Am pulse-height spectra. Observed results are demonstrated and discussed.
- 出版日期2011-5
- 单位中国科学院电工研究所