A 59-66 GHz Highly Stable Millimeter Wave Amplifier in 130 nm CMOS Technology

作者：Fahimnia Mehrdad^*; Mohammad Taheri Mahmoud; Wang Ying; Yu Ming; Safavi Naeini Safieddin

来源：IEEE Microwave and Wireless Components Letters, 2011, 21(6): 320-322.

DOI：10.1109/LMWC.2011.2141977

• CMOS
• low noise amplifier (LNA)
• microstrip line
• microwave/millimeter wave integrated circuit
• stability

The design and fabrication of four-stage cascaded mm-wave low noise amplifiers (LNAs) in a 130 nm CMOS technology are presented. The simultaneous high stability factor and low noise figure are obtained using proper inductors in both gate and source of the transistor. Measured gain of 14.7 dB with a 7 GHz bandwidth has been achieved. The larger inductors are realized with microstrip lines to improve the performance of the LNA and minimize the circuit size.

• 出版日期2011-6