Anomalous rectification in a purely electronic memristor

作者：Wang, Jingrui; Pan, Ruobing; Cao, Hongtao; Wang, Yang; Liang, Lingyan; Zhang, Hongliang; Gao, Junhua; Zhuge, Fei^*

来源：Applied Physics Letters, 2016, 109(14): 143505.

DOI：10.1063/1.4963887

• RESISTIVE SWITCHING MEMORY
• NEUROMORPHIC COMPUTATION
• OHMIC CONTACTS
• SYNAPSES
• ZNO
• SYSTEMS
• DEVICE
• RRAM

An anomalous rectification was observed in a purely electronic memristive device Ti/ZnO/Pt. It could be due to (1) an Ohmic or quasi-Ohmic contact at the ZnO/Pt interface and (2) a Schottky contact at the Ti/ZnO interface. The Ohmic contact originates from the reduction of ZnO occurring in the whole film instead of only at the Ti/ZnO interface. The Schottky contact may come from moisture adsorbed in the nanoporous ZnO. The conduction in the electroformed device is controlled by the carrier trapping/detrapping of the trap sites, inducing a poor rectification and high nonlinearity. Furthermore, a complementary resistive switching was achieved. Published by AIP Publishing.

• 出版日期2016-10-3
• 单位中国科学院宁波材料技术与工程研究所; 宁波工程学院