Process research of novel electron beam lithography resist Calixarene used in nanofabrication

作者：Zhao Min^*; Chen Bao Qin; Liu Ming; Ren Li Ming; Xie Chang Qing; Zhu Xiao Li; An Nan

来源：Nanotechnology and Precision Engineering, 2009, 7(3): 275-278.

• Calixarene
• Electron beam lithography (EBL)
• Electron beam resist
• Nanofabrication
• Process technology

In order to meet electron beam lithography';s (EBL) requirement for high resolution resist, the related techniques of taking Calixarene ramification as EBL resist in such processes as resist solution preparation, exposure and development were studied. JEOL JBX-5000LS electron beam lithography system was used in the experiment. The results show that under the conditions of 50 keV electron energy and 50 pA beam current, it is easy for Calixarene to form the figure of 50 nm single line or 50 nm lines and space. The advantages and disadvantages of Calixarene EBL resist were summarized through comparison with the common resists and their causes were also analyzed. As a new kind of EBL resist, Calixarene is expected to be used successfully in the fabrication of nano-structures, nano-scale devices and circuits.

• 出版日期2009