Achieving high ON/OFF ratio and good stability in organic nonvolatile resistive memory devices with polyisocyanide bearing oligothiophene

作者：Sakuragawa Yasushi; Takagi Yugaku; Ikai Tomoyuki; Maeda Katsuhiro; Toan Thanh Dao; Sakai Heisuke; Murata Hideyuki

来源：Japanese Journal of Applied Physics, 2016, 55(3): 03DC10.

DOI：10.7567/JJAP.55.03DC10

Polyisocyanide bearing oligothiophene pendants were used as an active layer in a nonvolatile resistive memory device. The current density current-voltage characteristics of the device showed nonvolatile memory behavior. The device exhibited a large ON/OFF ratio of 107 and a retention time of >4 x 10(4) under a read voltage of 0.5V. The log J-V-1/2 curves exhibit a good linear relationship in the OFF state, which suggests that the conduction mechanism in the OFF state obeys the thermionic emission model. In contrast, in the ON state, the current slope was 1.2 and the activation energy of ON state was similar to 6meV. These conductive features in the ON state could be attributed to charge conduction through filamentary pathways.

• 出版日期2016-3