An On-Chip Temperature Sensor With a Self-Discharging Diode in 32-nm SOI CMOS

作者：Chowdhury Golam^*; Hassibi A

来源：IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2012, 59(9): 568-572.

DOI：10.1109/TCSII.2012.2208669

• CMOS
• diode
• SOI
• temperature sensor
• thermal management
• time-to-digital converters (TDCs)

We report a 39 mu m x 27 mu m on-chip temperature sensor which uses the temperature-dependent reverse-bias leakage current of a lateral silicon on insulator (SOI) CMOS p-n diode to monitor the thermal profile of a 32-nm microprocessor core. In this sensor, the diode junction capacitance is first charged to a fixed voltage. Subsequently, the diode capacitance is allowed to self-discharge through its temperature-dependent reverse-bias current. Next, by using a time-to-digital-converter circuit, the discharge voltage is converted to a temperature-dependent time pulse, and finally, its width is measured by using a digital counter. This compact temperature sensor demonstrates a 3 sigma measurement inaccuracy of +/- 1.95 degrees C across the 5 degrees C-100 degrees C temperature range while consuming only 100 mu W from a single 1.65-V supply.

• 出版日期2012-9