Magnetic properties of GaMnN grown via molecular beam epitaxy using a single precursor

作者：Lee KJ; Kim KH; Yu FC; Im WS; Gao CX; Kim DJ^*; Kim HJ; Ihm YE

来源：Physica Status Solidi B-Basic Solid State Physics, 2004, 241(12): 2854-2857.

DOI：10.1002/pssb.200404975

GaMnN and Mg-codoped GaMnN films were grown via molecular beam epitaxy using the GaN single precursor Et2Ga(N-3)NH2C(CH3)(3). Through a comparative study, it was confirmed that hole carriers mediate ferromagnetism in GaMnN at room temperature. Furthermore, the effects of Mg codoping on the conductivity and magnetization properties of the layers were investigated. Mn in GaN is shown to be inefficient as a dopant in generating itinerant carriers and this limits the saturation magnetization. On the other hand, Mg revealed higher efficiency in producing holes, and as a consequence could greatly enhance the magnetization via increased ferromagnetic coupling among Mn atoms. The results suggest that the magnetic ordering can be adjusted by separate control of the carrier concentration and the content of the magnetic element in films of III-V ferromagnetic semiconductors.

• 出版日期2004-10