UV photoconductivity characteristics of ZnO nanowire field effect transistor treated by proton irradiation

作者：Choe Minhyeok; Hong Woong Ki; Park Woojin; Yoon Jongwon; Jo Gunho; Kwon Taehyeon; Welland Mark E; Lee Takhee^*

来源：Thin Solid Films, 2012, 520(9): 3624-3628.

DOI：10.1016/j.tsf.2012.01.015

• Zinc oxide
• Nanowires
• Proton irradiation
• UV photoconductivity

We investigated the UV photoconductivity characteristics of ZnO nanowire field effect transistors (FETs) irradiated by proton beams. After proton beam irradiation (using a beam energy of 10 MeV and a fluence of 10(12) cm(-2)), the drain current and carrier density in the ZnO nanowire FETs decreased, and the threshold voltage shifted to the positive gate bias direction due to the creation of interface traps at the SiO2/ZnO nanowire interface by the proton beam. The interface traps produced a higher surface barrier potential and a larger depletion region at the ZnO nanowire surface, affecting the photoconductivity and its decay time. The UV photoconductivity of the proton-irradiated ZnO nanowire FETs was higher and more prolonged than that of the pristine ZnO nanowire FETs. The results extend our understanding of the UV photoconductivity characteristics of ZnO nanowire devices and other materials when irradiated with highly energetic particles.

• 出版日期2012-2-29