A study on non-stoichiometric p-NiOx/n-Si heterojunction diode fabricated by RF sputtering: Determination of diode parameters

作者：Grilli Maria Luisa; Aydogan Sakir^*; Yilmaz Mehmet^*

来源：Superlattices and Microstructures, 2016, 100: 924-933.

DOI：10.1016/j.spmi.2016.10.059

• p-NiOx
• RF sputtering
• Schottky junction

NiOx thin films were grown on n-Si substrates by radio frequency sputtering technique for the fabrication of a heterojunction p-n diode. X-ray diffraction, scanning electron microscope and atomic force microscope results revealed that NiOx films had nano sized poly-crystalline nature. The X-ray energy dispersive analysis was used to determine elemental composition of the NiOx films. High quality vacuum evaporated silver (Ag) (ohmic) layer and nickel (Ni) (measurement electrode) dots were used to make contacts to the p-NiOx/n-Si heterojunction, in such a way that 8 Ni/p-NiOx/n-Si/Ag devices were fabricated. Current voltage (I-V) and capacitance-voltage (C-V) measurements of the p-NiOx/n-Si heterojunctions showed good diode characteristics and the average barrier height has been calculated as 0.652 eV.

• 出版日期2016-12