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摘要
Three-dimensional p-Si nanopillar/n-ZnO nanowire-array hierarchical nanoheterostructure photodetectors were achieved via a highly accessible and controllable fabrication process. By introducing PMMA to provide a flat, continuous and uniform surface, unique high transparency, low resistance top contact has been fabricated. The improved front electrode showed very small sheet resistivity of 0.002 Omega cm, two orders of magnitude lower than that of direct deposition of ITO onto ZnO (0.58 Omega cm).
- 出版日期2012
- 单位北京大学
