AMOLED backplane with back-channel etched oxide thin film transistors

作者：Lan, Lifeng; Xiong, Nana; Xiao, Peng; Wang, Lei; Xu, Miao; Zou, Jianhua; Peng, Junbiao

来源：Advanced Optoelectronics for Energy and Environment, AOEE 2013, Wuhan, 2013-05-25 To 2013-05-26.

DOI：10.1364/aoee.2013.asu3c.2

• Dry etch process
• Electrical stability
• Environment protection
• Indium zinc oxides
• Oxide thin-film transistors
• Source and drain electrodes
• Stopper layers
• Thin film transistors (TFTs)

An AMOLED backplane was fabricated using indium-zinc-oxide (IZO) thin-film transistors (TFTs) with back-channel-etch (BCE) structure. During TFT fabrication, a layer of Mo film was deposited onto IZO active layer, and then patterned by a wet-etch-method as source and drain electrodes. The etch rate selectivity of Mo to IZO was as high as 4×104. This TFT exhibited high mobility and good electrical stability. Furthermore, it had the advantages of low cost and environment protection, because etch-stopper-layer and air-polluted dry-etch process were not require in this TFT fabricating method.

• 出版日期2013
• 单位发光材料与器件国家重点实验室; 华南理工大学