Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires

作者：Marcano N^*; Sangiao S; Plaza M; Perez L; Fernandez Pacheco A; Cordoba R; Sanchez M C; Morellon L; Ibarra M R; De Teresa J M

来源：Applied Physics Letters, 2010, 96(8): 082110.

DOI：10.1063/1.3328101

• bismuth
• electrical resistivity
• electrodeposition
• galvanomagnetic effects
• nanofabrication
• nanowires
• ohmic contacts

We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5-300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion beam to deposit W-based nanocontacts. Magnetoresistance measurements show evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of 100 nm.

• 出版日期2010-2-22