摘要

The dominant power loss mechanism from conduction noise in a microstrip line was verified by investigating the effects of electrical conductivity and magnetic loss on noise reflection and transmission, and of power absorption in thin film absorbers (Ni-Zn ferrite thin film with high electrical resistivity, and electrically conductive ITO and Fe3O4 films). Using a simulation model of a microstrip line attached by thin films, the S parameters and power absorption were calculated for the frequency range from 0.05 to 3GHz. Even if the film has a large value of magnetic loss due to ferromagnetic resonance, it is predicted that power dissipation by magnetic loss would be quite small, as was predicted for the Ni-Zn ferrite films. For the conductive and magnetic Fe3O4 thin film with similar magnetic loss dispersion, the contribution of magnetic loss to total power loss is also quite small. The values of S-11, S-21, and power absorption were almost the same as that for conductive ITO thin film of which the electrical resistivity was on the same order as that of the Fe3O4 thin film. The simulation of power absorption by the hybrid structure of ITO/Ni-Zn ferrite and ITO/Fe3O4 also supports this conclusion.

  • 出版日期2014-5-7

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