Memory characteristics of Au nanocrystals embedded in metal-oxide- semiconductor structure by using atomic-layer-deposited Al2O3 as control oxide

作者：Wang Chen Chan^*; Chiou Yan Kai; Chang Che Hao; Tseng Jiun Yi; Wu Lin Jung; Chen Chun Yu; Wu Tai Bor

来源：Journal of Physics D: Applied Physics , 2007, 40(6): 1673-1677.

DOI：10.1088/0022-3727/40/6/016

The nonvolatile memory characteristics of metal-oxide-semiconductor (MOS) structures containing Au nanocrystals in the Al2O3/SiO2 matrix were studied. In this work, we have demonstrated that the use of Al2O3 as control oxide prepared by atomic-layer-deposition enhances the erase speed of the MOS capacitors. A giant capacitance-voltage hysteresis loop and a very short erase time which is lower than 1 ms can be obtained. Compared with the conventional floating-gate electrically erasable programmable read-only memories, the erase speed was promoted drastically. In addition, very low leakage current and large turn-around voltage resulting from electrons or holes stored in the Au nanocrystals were found in the current-voltage relation of the MOS capacitors.

• 出版日期2007-3-21
• 单位清华大学