摘要
The adsorption and reaction of titanium on an oxidized Si(001) surface have been investigated using Si 2p, Ti 2p and O Is core level photoemission measurements at room temperature (RT). We found that titanium adsorption on an oxidized Si(001) surface at RT causes a reduction of the intensity of the Si1+ and Si2+ states and an increase of the intensity of the Si3+ and Si4+ states. Based on an analysis of the Ti 2p and O Is states, we conclude that the change in the Si 2p oxidized state upon titanium adsorption is due to charge transfer rather than conformation change.
- 出版日期2013-8