Size model of Pb islands grown on Si(111)

作者：Wang G^*; Webb J F; Li S; Zi J

来源：Physical Review B - Condensed Matter and Materials Physics, 2003, 68(15): 1554061-1554065.

It has been found that uniform-height Pb islands with flat tops and steep edges (approximately cylindrical in shape) can be grown on Si(111) substrate, and that islands grown on different Pb/Si(111) interfaces have different stable heights and lateral sizes. For example, a Pb island on Si(111)-Pb(α -√3×√3) phase has a 5-step stable height and a lateral size of 18 nm. There have been much experimental and theoretical work dedicated to finding the stable heights of Pb islands, but papers on calculating the lateral size are few. The main part of this paper involves a simple model that includes a formula for calculating the radius of an island. Also, the interaction between Pb islands is considered so that electronic growth theory can be utilized, making it possible to study the growth of Pb islands by numerical simulation.

• 出版日期2003
• 单位复旦大学