Diminished band discontinuity at the phi interface of narrow-gap a-SiGe:H solar cell by hydrogenated amorphous silicon oxide buffer layer

作者：Duy Phong Pham; Kim Sangho; Anh Huy Tuan Le; Park Jinjoo^*; Yi Junsin^*

来源：Journal of Alloys and Compounds, 2018, 762: 616-620.

DOI：10.1016/j.jallcom.2018.05.248

• Narrow-gap a-SiGe:H solar cells
• a-SiOx:H buffer layers
• Band gap profiling

We optimized hydrogenated amorphous silicon oxide (a-SiOx:H) as a buffer layer at the p/i interface of hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells. This buffer layer was intended to effectively diminish the band discontinuity between the high-bandgap p-window layer and low-gap aSiGe:H absorption layer, thereby enhancing the cell performance. The open-circuit voltage (V-oc) increased by 3.7% as the [CO2]/ISiH4] gas ratio increased from 0 to 0.06. In addition, the short-circuit current density (J(sc)) gradually increased with the gas ratio. Using the optimized a-SiOx:H buffer layer, a high performance of 9.6% was recorded for narrow-gap a-SiGe:H thin film solar cells. a-SiGe:H solar cells with optimized a-SiOx:H buffer layers, used as middle subcells, are expected to enhance the total V-oc of triple-junction configuration solar cells.

• 出版日期2018-9-25