Lanthanum implantation for threshold voltage control in metal/high-k devices

作者：Fet A^*; Haeublein V; Bauer A J; Ryssel H; Frey L

来源：Microelectronic Engineering, 2009, 86(7-9): 1782-1785.

DOI：10.1016/j.mee.2009.03.042

• High-k
• Lanthanum
• Implantation
• Threshold voltage

In this paper the tuning of the n-metal effective work function by implantation of lanthanum is demonstrated. The effect of implantation and thermal annealing on the device flat-band voltage is presented. It is shown that lanthanum doping of the gate stack produces a negative shift of the flat-band voltage of -0.53 V for a lanthanum does of 5 x 10(14) cm(-2), after the device undergoes S/D anneal conditions.

• 出版日期2009-9