摘要

Narrow-wall-connected microstrip-to-waveguide transition using V-shaped patch element in millimeter-wave band is proposed. Since the microstrip line on the narrow-wall is perpendicular to the E-plane of the waveguide, waveguide field does not couple directly to the microstrip line. The current on the V-shaped patch element flows along inclined edges, then current on the V-shaped patch element couples to the microstrip line efficiently. Three types of transitions are investigated. A numerical investigation of these transitions show some relations between bandwidth and insertion loss. It is confirmed that the improved transition exhibits an insertion loss of 0.6 dB from 76 to 77 GHz, and a bandwidth of 4.1% (3.15 GHz) for the reflection coefficient below - 15 dB.

  • 出版日期2010-10