Additive Occupancy in the Cu6Sn5-Based Intermetallic Compound Between Sn-3.5Ag Solder and Cu Studied Using a First-Principles Approach

作者：Gao Feng^*; Qu Jianmin; Takemoto Tadashi

来源：Journal of Electronic Materials, 2010, 39(4): 426-432.

DOI：10.1007/s11664-010-1093-8

• Solder
• intermetallic compounds
• additive
• first principles
• density of states

A Cu6Sn5-based intermetallic compound containing a certain amount of Co or Ni is commonly formed at the interface between a Cu substrate and Sn-based solder. The Co or Ni additive is often found to occupy the Cu atom sublattice in the Cu6Sn5 crystal structure. In this paper, a first-principles approach based on density-functional theory is employed to explore the most favorable occupancy sites of Ni and Co dopants in the Cu6Sn5 crystal structure. It is found that, for up to 27.3 at.% concentration, both Ni and Co atoms tend to substitute for Cu in the Cu6Sn5-based structure and form more thermodynamically stable (Cu,Ni)(6)Sn-5 and (Cu,Co)(6)Sn-5 phases. In comparison, Ni is more effective than Co at stabilizing the Cu6Sn5 phase. At a lower concentration level (9.1 at.%), the Ni or Co atoms prefer to occupy the 4e Cu sublattice. At a higher concentration (27.3 at.%), the Ni atoms will likely be located on the 4e + 8f2 Cu sublattice. Analysis of density of states (DOS) and partial density of states (PDOS) indicates that hybridization between Ni-d (or Co-d) and Sn-p states plays a dominant role in structural stability. Compared with Cu4Ni2Sn5, where Ni occupies the 8f2 Cu sublattice, Cu4Co2Sn5 is less stable due to the lower amplitude of the Co-d PDOS peak and its position mismatch with the Sn-p PDOS peak.

• 出版日期2010-4
• 单位西北大学