Anomalous negative bias temperature instability degradation induced by source/drain bias in nanoscale PMOS devices

作者：Yan Baoguang^*; Yang Jingfeng; Xia Zhiliang; Liu Xiaoyan; Du Gang; Han Ruqi; Kang Jinfeng; Liao C C; Gan Zhenghao; Liao Miao; Wang J P; Wong Waisum

来源：IEEE Transactions on Nanotechnology, 2008, 7(4): 418-421.

DOI：10.1109/TNANO.2008.926343

• energetic hole
• interfacial dissociation of Si-H bonds
• negative bias temperature instability (NBTI)
• source/drain (S/D) bias

The effect of source/drain (S/D) bias on the negative bias temperature instability (NBTI) of pMOSFETS is studied. The anomalously enhanced NBTI under S/D bias conditions is observed, which cannot be explained by the conventional reaction-diffusion model. A new mechanism based on the enhanced interfacial dissociation of Si-H bonds induced by the energetic holes (the hole energy E(h) is higher than the reaction activation energy E(a) of Si-H bond dissociation) is proposed to address the observed degradation behaviors. Monte Carlo simulations are used to identify the validity of the new mechanism.

• 出版日期2008-7
• 单位北京大学