Achieving high MgO content in wurtzite ZnO epilayer grown on ScAlMgO4 substrate

作者：Wen, M. C.; Yan, T.; Chang, L.^*; Chou, M. M. C.; Ye, N.; Ploog, K. H.

来源：Journal of Crystal Growth, 2017, 477: 174-178.

DOI：10.1016/j.jcrysgro.2016.12.031

• Phase equilibria
• Molecular beam epitaxy
• Zn1-xMgxO
• Semiconducting II-VI materials
• Energy gap engineering

A series of wurtzite ZnO and Zn-1 xMgxO (x=0.41-0.66) epilayers have been grown on ScAlMgO4 (SCAM) (0001) substrates by plasma-assisted molecular beam epitaxy. X-ray diffraction results indicate that only a barely recognized amount of rocksalt phase exists in the epilayer having the highest MgO content of 66%. The epilayers with 41% and 50% MgO exhibit reasonable full width at half maximum (FWHM) values of 1200-1800" for the rocking curve of the (0002)(wz) reflection. However, both the surface morphology and the FWHM value deteriorate with further addition the MgO content to 66%.

• 出版日期2017-11-1
• 单位中国科学院福建物质结构研究所; 中山大学