X-ray electron probe microanalysis of the reaction zone of thermally stimulated heterovalent anion substitution in the Ga (2) (III) Se (3) (VI) -GaAs solid-phase system

作者：Budanov A V^*; Agapov B L; Boldyreva Ya A; Strygin V D; Tatokhin E A

来源：Journal of Surface Investigation-X-Ray Synchrotron and Neutron Techniques, 2012, 6(1): 19-24.

DOI：10.1134/S1027451012010053

X-ray electron probe microanalysis (EPMA) was used to study the concentration profiles of the main reaction components in the Ga2Se3-GaAs heterojunction obtained as a result of thermally stimulated heterovalent anion substitution. It has been found that the quasi-equilibrium and quasi-steady diffusion modes for delivery of chalcogen to the reaction zone are different with respect to the kinetics of the A (2) (III) C (3) (VI) layer growth. Independent of this, the concentration profiles of the reaction elements are self-organized with time, which allows heterostuctures with a sharp interphase boundary to be reproduced.

• 出版日期2012-2
• 单位中国科学院电工研究所