摘要

In this letter, a microwave cavity for investigating the effect of external microwave fields on the dielectric behavior of semiconductor material is proposed. We use a dual-mode rectangular cavity where the stimulus and test signals are supplied by two different swept frequency microwave sources. By adjusting the power level of the stimulus signal, the intensity of microwave field in the cavity is changed. Two band-stop filters are introduced to isolate the signals coming from the stimulus signal. Measurement results show that the dielectric properties of indium phosphate manifest nonlinear behavior under the electronic field intensity of V/m. From the experimental result and theoretical analysis, we conclude that the nonlinear behavior is caused by the material's inherent characteristics.