摘要
The in-plane resistivity rho(ab)(T) and the out-of-plane rho(c)(T) have been extensively measured for the pure single-crystal Bi2Sr2CaCu2O8+delta (Bi2212) annealed at different oxygen pressure. The rho(c)(T) and anisotropy [rho(c)(T)/rho(ab)(T)] decreases rapidly with increasing carrier concentration. It is found that the out-of-plane resistivity decreases linearly with temperature down to about 120 K for the overdoped sample; its resistivity anisotropy is a weak temperature dependence. In the ab plane, the anisotropy is very weak and nearly independent of temperature.
- 出版日期1998-12-1
- 单位中国科学技术大学