AZO-Gated Al0.2Ga0.8As/In0.2Ga0.8As High Electron Mobility Transistors

作者：Lee Ching Sung^*; Chou Bo Yi

来源：Electrochemical and Solid-State Letters, 2010, 13(3): H58-H60.

DOI：10.1149/1.3272929

• aluminium
• aluminium compounds
• gallium arsenide
• high electron mobility transistors
• III-V semiconductors
• II-VI semiconductors
• indium compounds
• integrated optoelectronics
• optical sensors
• photoluminescence
• transparency
• wide band gap semiconductors
• zinc compounds

This article reports on a high transparency aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor. The present device has demonstrated an improved intrinsic voltage gain (A(V)) of 257 and a superior two-terminal gate-drain breakdown (turn-on) voltages of -63 (3.4) V at 300 K compared to a conventional Au-gated device with the same gate dimensions of 1x100 mu m. The AZO gate shows a high transmittance of 88-98% for the wavelengths of 400-900 nm. Optical sensing characteristics and accurate on-device photoluminescence probing are also investigated.

• 出版日期2010