摘要

With the aid of numerical simulation, a novel microwave plasma reactor for diamond films deposition has been designed. The new reactor possesses a unique structure, neither purely cylindrical nor purely ellipsoidal, but a combination of the both. In this paper, the design strategy of the new reactor together with a simple but reliable phenomenological simulation method will be described. Preliminary experiments show that uniform diamond. films of high quality could be deposited using the new reactor, and the deposition rate of diamond films is typically about 3 mu m/h at 6 kW input power level on a 2 inch diameter silicon substrate.