摘要
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x10(19) cm(-3) is achieved. A Germanium gain spectrum of nearly 200nm is observed.
- 出版日期2012-5-7