Direct evidence of void passivation in Cu(InGa)(SSe)(2) absorber layers

作者：Lee Dongho; Lee Jaehan; Heo Sung; Park Jong Bong; Kim Young Su; Mo Chan B; Huh Kwangsoo; Yang JungYup^*; Nam Junggyu; Baek Dohyun; Park Sungchan; Kim ByoungJune; Kim Dongseop; Kang Yoonmook

来源：Applied Physics Letters, 2015, 106(8): 083903.

DOI：10.1063/1.4913612

We have investigated the charge collection condition around voids in copper indium gallium sulfur selenide (CIGSSe) solar cells fabricated by sputter and a sequential process of selenization/sulfurization. In this study, we found direct evidence of void passivation by using the junction electron beam induced current method, transmission electron microscopy, and energy dispersive X-ray spectroscopy. The high sulfur concentration at the void surface plays an important role in the performance enhancement of the device. The recombination around voids is effectively suppressed by field-assisted void passivation. Hence, the generated carriers are easily collected by the electrodes. Therefore, when the S/(S + Se) ratio at the void surface is over 8% at room temperature, the device performance degradation caused by the recombination at the voids is negligible at the CIGSSe layer.

• 出版日期2015-2-23